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Bench Talk for Design Engineers | The Official Blog of Mouser Electronics

On março 25, 2020 in All, Power, Wide Bandgap by Paul Lee

Wide bandgap semiconductors are an enabling technology for a significant improvement in power-conversion efficiency, saving money, and helping to conserve energy in industrial, IT, and consumer applications.

Tagged With: gallium nitride, GaN, HEMT, MOSFET, SiC, silicon carbide, WBG, wide bandgap

Why SiC Devices Are Ideal for Level 3 EV Charging Applications

On setembro 24, 2019 in All, Power, Wide Bandgap by Robert Huntley

Charging an EV can be a lengthy process, however, Level 3 “fast” DC charging techniques promise much faster charging capabilities that reduce charging times to minutes instead of hours. This efficiency relies on high-speed power conversion, for which new wide-bandgap technologies are well suited.

Tagged With: Electric vehicle chargers, EV charging, High efficiency EV charging, J1227, Level 3 chargers, ON Semiconductor, SiC, Silicon carbide, WBG, Wide bandgap

Move Over LEDs, Electric Motors Will Save the Planet

On novembro 30, 2018 in All, Industrial, Motor Control, Power, Wide Bandgap by Steven Keeping

LEDs save energy, but efficient electric motors can save much more. Now a new generation of GaN transistors promises new power-supply breakthroughs to help the units become even greener.

Tagged With: Electric motor driver design , Electric motors, GaN, High power-density electric motor, High-frequency inverters, Power supply design

SiC Devices Usurp Si MOSFETs and Diodes in Servers, Motors, EVs

On outubro 1, 2018 in All, Power, Wide Bandgap by Bill Schweber

Switching devices—both transistors and diodes—based on silicon-on-carbide (SiC) are redefining capabilities of power-related circuits. These offer far better efficiency and range than today’s best silicon-only MOSFETs, IGBTs, and diodes, and are already in widespread use in top-tier data centers and server farms.

Tagged With: Electric motors, Electric vehicles, EV, HEV, Hybrid electric vehicles, Power, Power-related circuits, SiC devices, SiC power, SiC technologies, SiC-based Diodes, SiC-based MOSFETs, Silicon-on-carbide devices, WBG, Wide Bandgap

Engineering for Space: Many Challenges, Various Solutions

On outubro 6, 2017 in All, Robotics, Wide Bandgap by Sylvie Barak

High-performance, zero margin for error, extreme environments, and more are just some of the high-stakes challenges that space engineers face. New materials, louvres, space hardening, Whipple shielding, and artificial intelligence (AI) are just some of the ways space design challenges are addressed.

Tagged With: Rosetta, AI, ESA, European Space Agency, fault tolerance, recycled rockets, silicon on insulator, silicon on sapphire, SOI, SOS, space industry design, Whipple shield, wide band gap

GaN the Giant Killer?

On janeiro 28, 2014 in Wide Bandgap by Barry Manz

Gallium nitride (GaN) has evolved from a promising laboratory curiosity to a major force in RF power generation in less than a decade. Much has been made of its inherent advantages, leading to projections that it will displace gallium arsenide and silicon LDMOS. However, for a variety of reasons GaN is more likely to complement its more entrenched rivals than displace them.

Tagged With: GaN, MOSFETS, RF Power, Silicon, Wide Bandgap

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