SemiQ GP2T080A120H 1200V SiC MOSFET
SemiQ GP2T080A120H 1200V SiC MOSFET delivers lower capacitance and higher system efficiency. The GP2T080A120H features high-speed switching, a driver source pin for gate driving, and a reliable body diode. The GP2T080A120H 1200V SiC MOSFET parts are tested to above 1400V and avalanche tested to 200mJ. Furthermore, the GP2T080A120H s easy to parallel and offers a lower Qg. The device is ideal for solar inverters, EV charging stations, induction heating and welding, and motor drivers.
Features
- High-speed switching
- Reliable body diode
- All parts tested to above 1400V
- Avalanche tested to 200mJ
- Driver source pin for gate driving
- Increased creepage due to the notched design
Applications
- Solar inverters
- Switch mode power supplies, UPS
- Induction heating and welding
- EV charging stations
- High voltage DC/DC converters
- Motor drives
Specifcations
Associated Products
SemiQ SiC MOSFET Power Modules
Provides low on-state resistance at high temperatures with excellent switching performance.
Package Style
Publicado: 2022-07-26
| Atualizado: 2022-07-28