Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Resultados: 16
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Configuração If - Corrente direta Vrrm - Tensão inversa repetitiva Vf - Tensão no sentido direto Ifsm - Corrente de surto no sentido direto Ir - Corrente inversa Temperatura operacional mínima Temperatura operacional máxima Série
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 06/03/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 06/03/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
780Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2L-M3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2LHM3
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/04/2026
Mín.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2L-M3