Diodos SCHOTTKY de carbureto de silício de potência

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Resultados: 45
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Configuração If - Corrente direta Vrrm - Tensão inversa repetitiva Vf - Tensão no sentido direto Ifsm - Corrente de surto no sentido direto Ir - Corrente inversa Temperatura operacional mínima Temperatura operacional máxima Série Embalagem
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 800Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 515Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2473L 460Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 10 A 650 V 1.3 V 60 A 50 uA - 55 C + 175 C VS-4C20CP07L-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2473L 455Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 10 A 650 V 1.3 V 60 A 50 uA - 55 C + 175 C VS-4C20CP07LHM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 459Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 800Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L 920Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07T-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L 1,000Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07THM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2473L 500Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247AD-3 Single 30 A 650 V 1,33 V 180 A 125 uA - 55 C + 175 C VS-4C30E3P07L-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 525Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2L-M3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L 800Em estoque
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L 980Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07T-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L 1,000Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07THM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2473L 500Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C40CP07L-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2473L 475Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247AD-3 Common Cathode 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C40CP07LHM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2472L
500Esperado 27/07/2026
Mín.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 10 A 1.2 kV 1.34 V 50 A 162 uA - 55 C + 175 C VS-4C10EP12LHM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 27/07/2026
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2LHM3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L
1,000Esperado 27/07/2026
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07THM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2472L
490Esperado 14/08/2026
Mín.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12L-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2472L
500Esperado 14/08/2026
Mín.: 1
Mult.: 1

Through Hole TO-247AD-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15EP12LHM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/08/2026
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2L-M3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 14/08/2026
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2LHM3 Reel, Cut Tape
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L
1,000Esperado 14/08/2026
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12T-M3 Tube
Vishay Semiconductors Diodos Schottky de SiC SicG4TO-2202L
1,000Esperado 14/08/2026
Mín.: 1
Mult.: 1

Through Hole TO-220AC-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12THM3 Tube
Vishay Semiconductors Diodos Schottky de SiC SiCG4D2PAK2L
800Esperado 27/07/2026
Mín.: 1
Mult.: 1
: 800

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2L-M3 Reel, Cut Tape