π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

Resultados: 69
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Tecnologia Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Nome comercial Embalagem
Toshiba MOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 90Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 200 V 70 A 27 mOhms - 20 V, 20 V 3.5 V 160 nC - 55 C + 150 C 410 W Enhancement MOSVII
Toshiba MOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51 240Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 2.5 A 2.51 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm 300Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 4 A 1.7 Ohms 35 W MOSVII
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 107Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 18 A 139 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ 1,754Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 1.7 Ohms - 30 V, 30 V 2.4 V 12 nC - 55 C + 150 C 100 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch MOS 10A 500V 45W 1050pF 0.72 83Em estoque
200Esperado 17/02/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 10 A 620 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 103Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 450 V 11 A 500 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55 72Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 550 mOhms - 30 V, 30 V 2 V 38 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 500V 45W 1550pF 0.47 136Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12.5 A 390 mOhms - 30 V, 30 V 4 V 28 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ 1,808Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 250 V 13 A 250 mOhms - 20 V, 20 V 1.5 V 25 nC - 55 C + 150 C 96 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch MOS 18A 500V 50W 2600pF 0.27 61Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18 A 270 mOhms - 30 V, 30 V 2 V 45 nC - 55 C + 150 C 50 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 19A 450V 50W 2600pF 0.25 73Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 19 A 250 mOhms 50 W MOSVII Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ 3Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 25 A 70 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 2A 650V 30W 380pF 3.26 262Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 2 A 3.26 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-ch 600V 2.5A 30w 2.8 Ohm 51Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 2.5 A 2.8 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm 145Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 3 A 2.25 Ohms - 30 V, 30 V 2.4 V 11 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 3A 500V 60W 280pF 3 Ohm 17Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3 A 3 Ohms - 30 V, 30 V 2.4 V 7 nC - 55 C + 150 C 60 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm 325Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 4 A 2 Ohms 30 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm 56Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.7 A 2 Ohms - 30 V, 30 V 4.4 V 11 nC + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm 250Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 5 A 1.7 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm 164Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5 A 1.43 Ohms - 30 V, 30 V 2 V 16 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs TO220 800V 5A N-CH MOSFET 148Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 800 V 5 A 2.4 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ 156Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 4.5 A 3.1 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm 853Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5 A 1.3 Ohms - 30 V, 30 V 4.4 V 11 nC - 55 C + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm 149Em estoque
200Esperado 02/03/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6 A 1.11 Ohms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube