Toshiba MOSV MOSFETs

Toshiba MOSV MOSFETs are N-channel MOSFETs offered in logic-level gate drive and low-voltage gate drive variants. These Toshiba devices provide a drain-source breakdown voltage (VDS) range from 50V to 60V and a gate-source voltage (VGS) range from 4V to 20V. Toshiba MOSV MOSFETs are offered in UFM, UF6, TSOP6F, and SOT-23F packages for design flexibility.

Features

  • Logic-level gate drive and low-voltage gate drive
  • 0.44Ω to 20Ω (@VGS = -2.5V) maximum drain-source on-resistance (RDS(ON))
  • N-channel polarity
  • 50V to 60V drain-source voltage (VDSS)
  • ±7V to ±20V gate-source voltage (VGSS)
  • 0.1A to 2.0A drain current (ID)
  •  0.2W to 1.0W power dissipation (PD)
  • 7.0pF to 150pF input capacitance (CISS)

Applications

  • High-speed switching applications
  • Analog switch applications
  • Relay drivers
  • Load Switches
  • Motor drivers
  • DC-DC converters
View Results ( 7 ) Page
Nº de ref. Número de canais Rds On - Fonte de drenagem na resistência Id - Corrente de drenagem contínua Ficha técnica
SSM6N357R,LF 2 Channel 1.8 Ohms 650 mA SSM6N357R,LF Ficha técnica
SSM3K2615R,LF 1 Channel 300 mOhms 2 A SSM3K2615R,LF Ficha técnica
SSM3K2615TU,LF 1 Channel 300 mOhms 2 A SSM3K2615TU,LF Ficha técnica
SSM3K357R,LF 1 Channel 1.8 Ohms 650 mA SSM3K357R,LF Ficha técnica
SSM6K407TU,LF 1 Channel 440 mOhms 2 A SSM6K407TU,LF Ficha técnica
SSM6N17FU(TE85L,F) 2 Channel 20 Ohms 100 mA SSM6N17FU(TE85L,F) Ficha técnica
SSM3K17FU,LF 1 Channel 20 Ohms 100 mA SSM3K17FU,LF Ficha técnica
Publicado: 2019-10-02 | Atualizado: 2023-12-08