STMicroelectronics MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry

Applications

  • Switching applications
  • LC converters
  • Resonant converters
View Results ( 20 ) Page
Nº de ref. Ficha técnica Id - Corrente de drenagem contínua Vgs - Voltagem de porta e fonte Qg - Carga na porta Pd - Dissipação de potência
STB40N60M2 STB40N60M2 Ficha técnica 34 A - 25 V, 25 V 57 nC 250 W
STD7NM80 STD7NM80 Ficha técnica 6.5 A - 30 V, 30 V 18 nC 90 W
STI28N60M2 STI28N60M2 Ficha técnica 22 A - 25 V, 25 V 36 nC 170 W
STP18NM80 STP18NM80 Ficha técnica 17 A - 30 V, 30 V 70 nC 190 W
STD5N60M2 STD5N60M2 Ficha técnica 3.5 A - 25 V, 25 V 8.5 nC 45 W
STL9N60M2 STL9N60M2 Ficha técnica 4.8 A - 25 V, 25 V 10 nC 48 W
STB28N60M2 STB28N60M2 Ficha técnica 22 A - 25 V, 25 V 36 nC 170 W
STL13N60M6 STL13N60M6 Ficha técnica 7 A - 25 V, 25 V 13 nC 52 W
STL10N60M6 STL10N60M6 Ficha técnica 5.5 A - 25 V, 25 V 8.8 nC 48 W
STP8N80K5 STP8N80K5 Ficha técnica 6 A - 30 V, 30 V 16.5 nC 110 W
Publicado: 2012-07-24 | Atualizado: 2023-12-14