Intelligent Memory Double Data Rate 4 (DDR4) DRAM
Intelligent Memory Double Data Rate 4 (DDR4) DRAM contains higher module density, higher data transmission speeds, and lower voltage requirements than DDR3 devices. These devices support Data Bus Inversion (DBI), Write Cycle Redundancy Check (CRC), Dynamic ODT (On Die Termination), and Fine Granularity Refresh Mode. With high-speed data transfer up to 3200MHz, the Intelligent Memory DDR4 ICs are ideal for demanding applications in the industrial market.
Features
- Double data rate clocking timing, 1.2V power supply
- Supported Data Bus Inversion (DBI)
- Supported Write Cycle Redundancy Check (CRC)
- Supported Dynamic ODT (On Die Termination)
- Supported Fine Granularity Refresh Mode
- High-speed data transfer up to 3200MHz
- 4Gb and 8Gb densities available
- RoHS compliant
Applications
- Commercial
- Industrial
Specifications
- 1Gx8 (16x banks x 64Mbit x 8) configuration
- 1333MHz or 1600MHz maximum speed options
- 2666Mbps or 3200Mbps data rate options
- 8-bit or 16-bit data bus width options
- 1.6GHz maximum clock frequency
- 1.2V supply voltage
- Temperature ranges
- 0 to +95°C commercial
- -40°C to +95°C industrial
- -40°C to +105°C high
Related DRAM
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Full range of JEDEC-compliant DRAMs and ECC DRAMs (SDRAM, DDR, DDR2, DDR3, DDR4, LPDDR4).
Intelligent Memory Synchronous DRAM (SDRAM)
Encompasses 64Mb, 128Mb, 256Mb, and 512Mb density options with a 166MHz maximum speed.
Intelligent Memory Double Data Rate 2 (DDR2) SDRAM
Eight-bank DDR2 SDRAM that achieves high-speed data transfer rates.
Intelligent Memory Double Data Rate 3 (DDR3) DRAM
Provides 1Gb to 16Gb densities for commercial and industrial applications.
Intelligent Memory 2G/4G/8Gbit LPDDR4 DRAM with ECC
Operates over the industrial temperature range and consumes less energy.