NTBL045N065SC1

onsemi
863-NTBL045N065SC1
NTBL045N065SC1

Fabricante.:

Descrição:
MOSFETs de SiC SIC MOS TOLL 650V

Modelo ECAD:
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Em estoque: 1,374

Estoque:
1,374 Pode ser enviado imediatamente
Tempo de entrega da fábrica:
20 semanas Tempo estimado de produção de fábrica para quantidades acima do indicado.
Quantidades maiores que 1374 estarão sujeitas a exigências de pedido mínimo.
Mínimo: 1   Vários: 1
Preço unitário:
$-.--
Ext. Preço:
$-.--
Est. Tarifa:

Preços (USD)

Qtde Preço unitário
Ext. Preço
$12.42 $12.42
$7.88 $78.80
$7.71 $771.00
$7.20 $7,200.00
Bobina cheia (pedidos em múltiplos de 2000)
$6.20 $12,400.00
4,000 Cotação

Atributo de produto Valor do atributo Selecionar atributo
onsemi
Categoria de produto: MOSFETs de SiC
RoHS:  
REACH - SVHC:
SMD/SMT
PSOF-8
N-Channel
1 Channel
650 V
73 A
50 mOhms
- 8 V, + 22 V
4.3 V
105 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
Marca: onsemi
Configuração: Single
Tempo de queda: 7 ns
Transcondutância em avanço - Mín: 16 S
Embalagem: Reel
Embalagem: Cut Tape
Tipo de Produto: SiC MOSFETS
Tempo de ascensão: 14 ns
Série: NTBL045N065SC1
Quantidade do pacote de fábrica: 2000
Subcategoria: Transistors
Tecnologia: SiC
Tempo de retardo de desligamento típico: 26 ns
Tempo típico de ativação/retardo : 13 ns
Produtos encontrados:
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Atributos selecionados: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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