600V 4th Gen PrestoMOS™ Super Junction MOSFETs

ROHM Semiconductor 600V 4th Gen PrestoMOS™ Super Junction MOSFETs utilize original patented technology to accelerate the parasitic diode, achieving ultra-fast reverse recovery characteristics to achieve low power consumption. The PrestoMOS design enables a reduction in power loss of about 58% at light loads when compared with IGBT implementations. Additionally, raising the reference voltage needed to turn ON the MOSFET prevents self-turn-ON, which is one of the main causes of loss. The optimized built-in parasitic diode improves the soft recovery index specific to Super Junction MOSFETs, which reduces noise that can lead to malfunction.

Resultados: 14
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ROHM Semiconductor MOSFETs TO220 600V 12A N-CH MOSFET 2,029Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 185 mOhms - 30 V, 30 V 6 V 28 nC - 55 C + 150 C 62 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 105A N-CH MOSFET 1,959Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 17 A 114 mOhms - 30 V, 30 V 6.5 V 50 nC - 55 C + 150 C 81 W Enhancement Tube
ROHM Semiconductor MOSFETs TO252 650V 39A N-CH MOSFET 5,000Em estoque
Mín.: 2,500
Mult.: 2,500
Bobina: 2,500

Si SMD/SMT TO-252-3 N-Channel 1 Channel 600 V 13 A 300 mOhms - 30 V, 30 V 6.5 V 21 nC - 55 C + 150 C 131 W Enhancement Reel
ROHM Semiconductor MOSFETs TO220 600V 10A N-CH MOSFET 1,963Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 10 A 204 mOhms - 30 V, 30 V 6.5 V 27 nC - 55 C + 150 C 61 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 39A N-CH MOSFET 1,904Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 8 A 300 mOhms - 30 V, 30 V 6.5 V 21 nC - 55 C + 150 C 54 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 42A N-CH MOSFET 2,025Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 14 A 260 mOhms - 30 V, 30 V 6 V 20 nC - 55 C + 150 C 54 W Enhancement Tube
ROHM Semiconductor MOSFETs TO247 650V 165A N-CH MOSFET 1,153Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 55 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 543 W Enhancement Tube
ROHM Semiconductor MOSFETs TO247 650V 231A N-CH MOSFET 1,190Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 77 A 51 mOhms - 30 V, 30 V 6.5 V 108 nC - 55 C + 150 C 781 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 165A N-CH MOSFET 2,042Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 23 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 100 W Enhancement Tube
ROHM Semiconductor MOSFETs TO3P 650V 165A N-CH MOSFET 567Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 23 A 71 mOhms - 30 V, 30 V 6.5 V 80 nC - 55 C + 150 C 99 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 72A N-CH MOSFET 2,003Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 24 A 153 mOhms - 30 V, 30 V 6.5 V 38 nC - 55 C + 150 C 245 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 72A N-CH MOSFET 1,969Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 13 A 153 mOhms - 30 V, 30 V 6.5 V 38 nC - 55 C + 150 C 70 W Enhancement Tube
ROHM Semiconductor MOSFETs Transistor MOSFET, Nch 600V 77A 4th Gen, Fast Recover 720Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 600 V 29 A 51 Ohms - 30 V, 30 V 6.5 V 108 nC - 55 C + 150 C 113 W Enhancement Tube
ROHM Semiconductor MOSFETs TO220 650V 105A N-CH MOSFET
1,000Esperado 09/07/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 600 V 35 A 114 mOhms - 30 V, 30 V 6.5 V 50 nC - 55 C + 150 C 347 W Enhancement Tube