DTMOSIV-H MOSFETs

Toshiba DTMOSIV-H MOSFETs are suited to applications that require high reliability, power efficiency, and a compact design, such as high-efficiency switching power supplies for servers and telecom base stations and as power conditioners for photovoltaic inverters. Toshiba DTMOSIV-H MOSFETs achieve a high-speed switching performance while keeping the low ON-resistance level of conventional DTMOSIV and without loss of power. This is accomplished by reducing parasitic capacitance between gate and drain, which also contributes to improved power efficiency and downsizing of products.

Resultados: 19
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Tecnologia Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Nome comercial Embalagem
Toshiba MOSFETs Power MOSFET N-Channel 639Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) 4,891Em estoque
Mín.: 1
Mult.: 1
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 240 W Enhancement DTMOSIV-H Reel, Cut Tape

Toshiba MOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) 10Em estoque
30Esperado 01/06/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.5 V 85 nC - 55 C + 150 C 270 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel 98Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6 41Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 80 A 24 mOhms 30 V 4 V 140 nC + 150 C 506 W Enhancement Tube
Toshiba MOSFETs Power MOSFET N-Channel 56Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel 60Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Power MOSFET N-Channel 71Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 120 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 88m (VGS=10V) 52Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) 24Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS 46Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 30.8 A 88 mOhms - 30 V, 30 V 3.5 V 65 nC - 55 C + 150 C 230 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs DTMOSIV-High Speed 600V 40mOhmmax 60Em estoque
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS
5Esperado 01/06/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 61.8 A 40 mOhms - 30 V, 30 V 3.5 V 135 nC - 55 C + 150 C 400 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS
97Esperado 14/09/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube

Toshiba MOSFETs Power MOSFET N-Channel
89Esperado 16/10/2026
Mín.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 105 mOhms - 30 V, 30 V 2.5 V 40 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Não estocado
Mín.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 150 mOhms - 30 V, 30 V 3.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV-H Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DFN 8?8 PD=180W F=1MHZ Não estocado
Mín.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 22 A 170 mOhms - 30 V, 30 V 3 V 50 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=180W F=1MHZ Não estocado
Mín.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 25 A 150 mOhms - 30 V, 30 V 3 V 60 nC - 55 C + 150 C 180 W Enhancement DTMOSIV-H Reel
Toshiba MOSFETs 180W 1MHZ POWER MOSFET TRANSISTOR Não estocado
Mín.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DFN8x8-5 DTMOSIV-H Reel