700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

Resultados: 7
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Modo de canal
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS 297Em estoque
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS 287Em estoque
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS 88Em estoque
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS 124Em estoque
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS
744Esperado 26/02/2026
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS
249Esperado 02/03/2026
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement
Infineon Technologies FETs GaN LEGACY GAN SYSTEMS Tempo de conclusão 18 semanas
Mín.: 1
Mult.: 1
Bobina: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement