MC33GD3100 Advanced IGBT/SiC Gate Drivers

NXP Semiconductors MC33GD3100 Advanced IGBT/SiC Gate Drivers are single-channel gate drivers for insulated-gate bipolar transistors (IGBT) and Silicon Carbide (SiC) power devices. The NXP MC33GD3100 Gate Drivers feature advanced functional safety, control, and protection features, making it ideal for automotive and EV powertrain applications (fully AEC-Q100 grade 1 qualified). Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage, and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable under-voltage lockout (UVLO) protects while ensuring sufficient gate drive voltage headroom.

Resultados: 8
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Série Estilo de montagem Caixa / Gabinete Número de canais Temperatura operacional mínima Temperatura operacional máxima Embalagem
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters 80Em estoque
Mín.: 1
Mult.: 1

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Tube
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters 58Em estoque
Mín.: 1
Mult.: 1

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Tube
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters 84Em estoque
Mín.: 1
Mult.: 1

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Tube
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters 84Em estoque
Mín.: 1
Mult.: 1

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Tube
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters Tempo de conclusão sem o estoque 16 semanas
Mín.: 1,000
Mult.: 1,000
Bobina: 1,000

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Reel
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters Tempo de conclusão sem o estoque 16 semanas
Mín.: 1,000
Mult.: 1,000
Bobina: 1,000

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Reel
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters Tempo de conclusão sem o estoque 99 semanas
Mín.: 1,000
Mult.: 1,000
Bobina: 1,000

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Reel
NXP Semiconductors Gate drivers isolados galvanicamente IGBT & SiC GDIC for xEV traction inverters Tempo de conclusão sem o estoque 99 semanas
Mín.: 1,000
Mult.: 1,000
Bobina: 1,000

GD3100 SMD/SMT WSOIC-32 1 Channel - 40 C + 125 C Reel