CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.

Resultados: 14
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Nome comercial
Infineon Technologies FETs GaN Two 140 mohm / 650 V GaN transistors in half-bridge configuration 2,392Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT QFN-32 N-Channel 2 Channel 650 V 170 mOhms 1.6 V 1.8 nC - 55 C + 150 C
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 1,868Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT HEMT 1 Channel 650 V 22 A 70 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 111 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,304Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.6 V 25 nC - 55 C + 150 C 81 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,388Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT HEMT 1 Channel 650 V 16 A 140 mOhms - 10 V 1.6 V 2.4 nC - 55 C + 150 C 59 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,263Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,525Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 70 mOhms - 10 V 1.2 V 4.7 nC - 55 C + 150 C 91 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,832Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.2 V 3.3 nC - 55 C + 150 C 68 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,696Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 20 A 140 mOhms - 10 V 1.2 V 2.4 nC - 55 C + 150 C 51 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,777Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

SMD/SMT PG-LSON-8 HEMT 1 Channel 650 V 12 A 170 mOhms - 10 V 1.2 V 1.8 nC - 55 C + 150 C 42 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 1,432Em estoque
2,000Esperado 12/03/2026
Mín.: 1
Mult.: 1
Bobina: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 70 A 30 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 236 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 2,000Em estoque
2,000No pedido
Mín.: 1
Mult.: 1
Bobina: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 49 A 42 mOhms - 10 V 1.6 V 7.7 nC - 55 C + 150 C 167 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 1,862Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 6 nC - 55 C + 150 C 131 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 1,395Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 31 A 66 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 106 W Enhancement CoolGaN
Infineon Technologies FETs GaN CoolGaN Transistor 650 V G5 1,631Em estoque
Mín.: 1
Mult.: 1
Bobina: 2,000

SMD/SMT PG-HSOF-8 HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN