GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

Results: 2
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Nexperia GaN FETs GANB012-040CBA/SOT8088/WLCSP12
Datasheet
2,200In Stock
Min.: 1
Mult.: 1
Reel: 2,500

SMD/SMT WLCSP-12 P-Channel 1 Channel 40 V 10 A 12 mOhms 6 V 2.4 V 7.2 nC - 40 C + 125 C 11 W Enhancement
Nexperia GaN FETs GANB1R2-040QBA/SOT8092/VQFN16
Datasheet
1,826In Stock
Min.: 1
Mult.: 1
Reel: 2,500

SMD/SMT VQFN-16 P-Channel 1 Channel 40 V 100 A 1.2 mOhms 6 V 2.4 V 60 nC - 40 C + 125 C 105 W Enhancement