|
|
FETs GaN MV GAN DISCRETES
- IGC033S10S1XTMA1
- Infineon Technologies
-
1:
$4.55
-
9,950Em estoque
-
Novo Produto
|
Nº de ref. da Mouser #
726-IGC033S10S1XTMA1
Novo Produto
|
Infineon Technologies
|
FETs GaN MV GAN DISCRETES
|
|
9,950Em estoque
|
|
|
$4.55
|
|
|
$2.91
|
|
|
$2.14
|
|
|
$1.83
|
|
|
$1.77
|
|
|
$1.49
|
|
Mín.: 1
Mult.: 1
:
5,000
|
|
|
SMD/SMT
|
PG-TSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
FETs GaN CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
- IGB070S10S1XTMA1
- Infineon Technologies
-
1:
$3.36
-
3,506Em estoque
-
Novo Produto
|
Nº de ref. da Mouser #
726-IGB070S10S1XTMA1
Novo Produto
|
Infineon Technologies
|
FETs GaN CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm
|
|
3,506Em estoque
|
|
|
$3.36
|
|
|
$2.13
|
|
|
$1.52
|
|
|
$1.24
|
|
|
Exibir
|
|
|
$0.981
|
|
|
$1.21
|
|
|
$1.16
|
|
|
$0.981
|
|
Mín.: 1
Mult.: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
38 A
|
7 mOhms
|
6.5 V
|
2.9 V
|
6.1 nC
|
- 40 C
|
+ 150 C
|
23 W
|
Enhancement
|
CoolGaN
|
|
|
|
FETs GaN CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
- IGB110S10S1XTMA1
- Infineon Technologies
-
1:
$2.24
-
2,682Em estoque
-
Novo Produto
|
Nº de ref. da Mouser #
726-IGB110S10S1XTMA1
Novo Produto
|
Infineon Technologies
|
FETs GaN CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
|
|
2,682Em estoque
|
|
|
$2.24
|
|
|
$1.39
|
|
|
$0.99
|
|
|
$0.827
|
|
|
$0.651
|
|
|
Exibir
|
|
|
$0.757
|
|
|
$0.745
|
|
|
$0.618
|
|
Mín.: 1
Mult.: 1
:
5,000
|
|
|
SMD/SMT
|
|
|
1 Channel
|
100 V
|
23 A
|
11 mOhms
|
6.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
|
|
FETs GaN MV GAN DISCRETES
- IGC033S101XTMA1
- Infineon Technologies
-
1:
$4.60
-
3,677Em estoque
-
Novo Produto
|
Nº de ref. da Mouser #
726-IGC033S101XTMA1
Novo Produto
|
Infineon Technologies
|
FETs GaN MV GAN DISCRETES
|
|
3,677Em estoque
|
|
|
$4.60
|
|
|
$2.97
|
|
|
$2.14
|
|
|
$1.83
|
|
|
$1.71
|
|
|
$1.49
|
|
Mín.: 1
Mult.: 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-6
|
HEMT
|
1 Channel
|
100 V
|
76 A
|
3.3 mOhms
|
- 4 V, + 5.5 V
|
2.9 V
|
11 nC
|
- 40 C
|
+ 150 C
|
45 W
|
Enhancement
|
CoolGaN
|
|
|
|
FETs GaN MV GAN DISCRETES
- IGB110S101XTMA1
- Infineon Technologies
-
1:
$2.41
-
1,915Em estoque
-
Novo Produto
|
Nº de ref. da Mouser #
726-IGB110S101XTMA1
Novo Produto
|
Infineon Technologies
|
FETs GaN MV GAN DISCRETES
|
|
1,915Em estoque
|
|
|
$2.41
|
|
|
$1.49
|
|
|
$1.04
|
|
|
$0.839
|
|
|
$0.651
|
|
|
Exibir
|
|
|
$0.757
|
|
|
$0.745
|
|
|
$0.618
|
|
Mín.: 1
Mult.: 1
:
5,000
|
|
|
SMD/SMT
|
PG-VSON-4
|
HEMT
|
1 Channel
|
100 V
|
23 A
|
|
- 4 V, + 5.5 V
|
2.9 V
|
3.4 nC
|
- 40 C
|
+ 150 C
|
15 W
|
Enhancement
|
CoolGaN
|
|
Brasil