TO-220ACG SiC Schottky Barrier Diodes

ROHM Semiconductor TO-220ACG Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) feature a reverse voltage range of 650V to 1200V and a continuous reverse current range of 1.2µA to 20.0µA. SiC technology enables these devices to maintain a low capacitive charge (QC), reducing switching loss while enabling high-speed switching operation. In addition, unlike Si-based fast-recovery diodes, where the reverse recovery time increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance.

Resultados: 10
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Configuração If - Corrente direta Vrrm - Tensão inversa repetitiva Vf - Tensão no sentido direto Ifsm - Corrente de surto no sentido direto Ir - Corrente inversa Temperatura operacional máxima Embalagem
ROHM Semiconductor Diodos Schottky de SiC RECT 1.2KV 15A RDL SIC SKY 2,719Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 15 A 1.2 kV 1.6 V 62 A 300 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC RECT 1.2KV 5A RDL SIC SKY 3,968Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 5 A 1.2 kV 1.6 V 23 A 100 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 15A, 2nd Gen 6,417Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 15 A 650 V 1.55 V 52 A 300 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 8A, 2nd Gen 1,701Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 8 A 650 V 1.55 V 30 A 160 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC RECT 1.2KV 10A RDL SIC SKY 752Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 10 A 1.2 kV 1.6 V 42 A 200 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC RECT 1.2KV 20A RDL SIC SKY 1,391Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 20 A 1.2 kV 1.6 V 79 A 400 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 10A, 2nd Gen 770Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 10 A 650 V 1.55 V 38 A 200 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 12A, 2nd Gen 830Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 12 A 650 V 1.55 V 43 A 240 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 20A, 2nd Gen 11Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-220ACG-2 Single 20 A 650 V 1.55 V 68 A 400 uA + 175 C Tube
ROHM Semiconductor Diodos Schottky de SiC SiC Schottky Barrier Diode, 650V, 6A, 2nd Gen Tempo de conclusão sem o estoque 21 semanas

Through Hole TO-220ACG-2 Single 6 A 650 V 1.55 V 23 A 120 uA + 175 C Tube