PJQx 30V N-Channel Enhancement Mode MOSFETs

PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs are designed with logic level gate drive in a DFN5060X-8L and DFN3333-8L packages. These MOSFETs feature low on−resistance (RDS(on)), excellent Figure Of Merit (FOM), and ±20 gate-source voltage. The PJQx 30V N-Channel MOSFETs are AEC-Q101 qualified and are lead-free in compliance with EU RoHS 2.0 standards. These MOSFETs are ideal for automotive applications.

Resultados: 22
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Tecnologia Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal Qualificação Embalagem
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 4,698Em estoque
Mín.: 1
Mult.: 1
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 80 A 4.4 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 175 C 45.5 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 5,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 55 A 6.5 mOhms - 20 V, 20 V 2.5 V 10.7 nC - 55 C + 175 C 32 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 4,899Em estoque
Mín.: 1
Mult.: 1
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 65 A 5.5 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 175 C 37.5 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 5,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 5,000

Si AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 4,986Em estoque
Mín.: 1
Mult.: 1
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 38 A 9.3 mOhms - 20 V, 20 V 2.5 V 9.5 nC - 55 C + 175 C 21.4 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 2,980Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 93 A 3.6 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 175 C 50 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 2,996Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060X-8 N-Channel 1 Channel 30 V 85 A 3.6 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 41.7 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 3,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 73 A 5 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 175 C 43 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 2,996Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060X-8 N-Channel 1 Channel 30 V 68 A 4.9 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 35.7 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET 2,585Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 61 A 6 mOhms - 20 V, 20 V 2.5 V 11 nC - 55 C + 175 C 31.3 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 2,980Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060X-8 N-Channel 1 Channel 30 V 58 A 6 mOhms - 20 V, 20 V 2.5 V 11 nC - 55 C + 150 C 30 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 3,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 16.7 A 7.5 mOhms - 20 V, 20 V 2.5 V 12.4 nC - 55 C + 175 C 33 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 3,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060X-8 N-Channel 1 Channel 30 V 49 A 7.3 mOhms - 20 V, 20 V 2.5 V 12.4 nC - 55 C + 150 C 27.8 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 3,000Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 39 A 9.3 mOhms - 20 V, 20 V 2.5 V 9.5 nC - 55 C + 175 C 23 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET 2,995Em estoque
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060X-8 N-Channel 1 Channel 30 V 37 A 8.9 mOhms - 20 V, 20 V 2.5 V 9.5 nC - 55 C + 150 C 19.2 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 5,000
Mult.: 5,000
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 75 A 4.2 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 38 W Enhancement Reel
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 5,000
Mult.: 5,000
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 62 A 5.5 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 31.3 W Enhancement Reel
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 1
Mult.: 1
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 51 A 6.5 mOhms - 20 V, 20 V 2.5 V 10.7 nC - 55 C + 150 C 26.6 W Enhancement Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 5,000
Mult.: 5,000
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 45 A 7.8 mOhms - 20 V, 20 V 2.5 V 12.4 nC - 55 C + 150 C 25 W Enhancement Reel
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 5,000
Mult.: 5,000
Bobina: 5,000

Si SMD/SMT DFN-3333-8 N-Channel 1 Channel 30 V 36 A 8.9 mOhms - 20 V, 20 V 2.5 V 9.5 nC - 55 C + 150 C 18 W Enhancement Reel
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 1
Mult.: 1
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 152 A 1.7 mOhms - 20 V, 20 V 2.5 V 45 nC - 55 C + 175 C 79 W Enhancement AEC-Q101 Reel, Cut Tape
Panjit MOSFETs 30V N-Channel (LL) SGT MOSFET Tempo de conclusão sem o estoque 20 semanas
Mín.: 3,000
Mult.: 3,000
Bobina: 3,000

Si SMD/SMT DFN-5060-8 N-Channel 1 Channel 30 V 29.6 A 2 mOhms - 20 V, 20 V 2.5 V 43 nC - 55 C + 175 C 3.3 W Enhancement AEC-Q101 Reel