MOSFETs de Canal N de Carbeto de Silício (SiC) de 1.700 V
Central Semiconductor 1700V N-Channel Silicon Carbide (SiC) MOSFETs are designed for high-speed switching and fast reverse recovery applications. These MOSFETs feature a gate-source voltage (VGS) rating of 20V and a continuous drain current (ID) of 37A (CDMS24720-170) or 26A (CDMS24740-170). Both devices have a 28W power dissipation (PD) rating and are packaged in a TO-247 with an operating temperature range of -55°C to 175°C. These Central Semiconductor 1700V SiC MOSFETs support higher breakdown voltage and better thermal conductivity.
