Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Resultados: 20
Selecionar Imagem Número de peça Fabricante Descrição Ficha técnica Disponibilidade Preços (USD) Filtrar os resultados na tabela por preço unitário baseado na sua quantidade. Qtde RoHS Modelo ECAD Estilo de montagem Caixa / Gabinete Polaridade do transistor Número de canais Vds - Tensão de ruptura entre drenagem e fonte Id - Corrente de drenagem contínua Rds On - Fonte de drenagem na resistência Vgs - Voltagem de porta e fonte Tensão de limite porta e fonte Qg - Carga na porta Temperatura operacional mínima Temperatura operacional máxima Pd - Dissipação de potência Modo de canal
APC-E MOSFETs de SiC 650V 50mR, TO-247-4L, Industrial Grade 288Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E MOSFETs de SiC 1200V 75mR, TO-247-4L, Automotive Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E MOSFETs de SiC 1200V 75mR, TO-247-4L, Industrial Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E MOSFETs de SiC 650V 50mR, TO-247-4L, Automotive Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E MOSFETs de SiC 650V 27mR, TO-247-4L, Automotive Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFETs de SiC 1200V 30mR, TO-247-4L, Automotive Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E MOSFETs de SiC 1200V 13mR, TO247-4L, Industrial Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E MOSFETs de SiC 1200V 13mR, TO247-4L, Automotive Grade 300Em estoque
Mín.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E MOSFETs de SiC 650V 27mR, SAPKG-9L, Automotive Grade
600Esperado 28/08/2026
Mín.: 1
Mult.: 1
Bobina: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFETs de SiC 650V 35mR, TO-247-4L, Automotive Grade
300Esperado 03/04/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4L 650 V
APC-E MOSFETs de SiC 1200V 20mR, TO-247-4L, Industrial Grade
300Esperado 03/04/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E MOSFETs de SiC 650V 27mR, TO-247-4L, Industrial Grade
300Esperado 27/03/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFETs de SiC 1200V 30mR, TO-247-4L, Industrial Grade
300Esperado 27/03/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E MOSFETs de SiC 650V 65mR, TO-247-3L, Automotive Grade
300Esperado 01/05/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E MOSFETs de SiC 650V 35mR, TO-247-4L, Industrial Grade
300Esperado 03/04/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-4L 650 V

APC-E MOSFETs de SiC 650V 65mR, TO-247-3L, Industrial Grade
300Esperado 01/05/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E MOSFETs de SiC 1700V 1000mR, TO247-3L, Industrial Grade
300Esperado 27/03/2026
Mín.: 1
Mult.: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E MOSFETs de SiC 1200V 75mR, TO247-4L, Automotive Grade Tempo de conclusão sem o estoque 15 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E MOSFETs de SiC 1200V 32mR, TO247-4L, Industrial Grade Tempo de conclusão sem o estoque 15 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E MOSFETs de SiC 1200V 75mR, TO247-4L, Industrial Grade Tempo de conclusão sem o estoque 15 semanas
Mín.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C