GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class robustness and thermal conductivity. The 650V SiC Schottky MPS Diodes feature superior system ruggedness, zero recovery losses, and smaller heat sink requirements. Additionally, the 650V Diodes enable extremely fast switching, reduced cooling requirements, zero reverse recovery current, and increased system power density.

The GeneSiC 650V SiC Diodes offer a continuous forward current range of 6A, 10A, 8A, 16A, and 20A. The devices also feature a total capacitive charge range of 15nC, 20nC, 25nC, 40nC, and 50nC. The 650V diodes are ideal for ease of paralleling without thermal runaway. The 650V SiC Schottky MPS Diodes are available in DO-214, TO-252, TO-220, TO-247, and SOT-227 packages.

Features

  • High avalanche (UIS) capability
  • Enhanced surge current capability
  • Superior figure of merit QC/IF
  • Low thermal resistance
  • 175°C Maximum operating temperature
  • Temperature independent fast switching
  • Positive temperature coefficient of VF

Applications

  • Switched mode power supply (SMPS)
  • Solar inverter
  • Server and telecom power supply
  • Battery charger
  • Uninterruptible power supply (UPS)
  • Motor control
  • Power factor correction (PFC)
Publicado: 2020-12-07 | Atualizado: 2023-02-22